Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

被引:229
作者
Zubia, D [1 ]
Hersee, SD [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
D O I
10.1063/1.370153
中图分类号
O59 [应用物理学];
学科分类号
摘要
This article describes an approach to the heteroepitaxy of lattice mismatched semiconductors, that we call nanoheteroepitaxy. The theory developed here shows that the 3D stress relief mechanisms that are active when an epilayer is nucleated as an array of nanoscale islands on a compliant patterned substrate, will significantly reduce the strain energy in the epilayer and extend the critical thickness dramatically. Calculations show that with the scale of patterning that is achievable with advanced lithography (10-100 nm) we can eliminate mismatch dislocations from heterojunctions that are mismatched by as much as 4.2%. (C) 1999 American Institute of Physics. [S0021-8979(99)03109-6].
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页码:6492 / 6496
页数:5
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