Quantitative understanding of electron mobility limited by coulomb scattering in metal oxide semiconductor field effect transistors with N2O and NO oxynitrides

A new model for electron mobility limited by Coulomb scattering, mu (c), for metal oxide semiconductor field effect transistors (MOSFETs) with N2O and NO oxynitrides has been proposed. It is shown that this model accurately represents the experimental mobility behavior, such as the difference of it, between pure oxides and oxynitrides and the dependence on the inversion layer electron density, using physically appropriate parameters of Coulomb scattering centers. The effects of the location of fixed charges and the multi-subband occupation are examined to investigate the physical meaning of this new model.