DEGRADATION OF INVERSION LAYER ELECTRON-MOBILITY DUE TO INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：22

作者：

MATSUOKA, T ^{[1
]}

TAGUCHI, S ^{[1
]}

KHOSRU, QDM ^{[1
]}

TANIGUCHI, K ^{[1
]}

HAMAGUCHI, C ^{[1
]}

机构：

[1] SHARP CO LTD, CENT RES LABS, TENRI, NARA 632, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.360013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Degradation of inversion layer electron mobility during Fowler-Nordheim electron injection has been investigated using n-channel metal-oxide-semiconductor transistors. The change of the reciprocal effective mobility, Delta(1/mu(EFF)), has been found to be linearly related to the generated interface trap density, Delta N-it, at a given effective electric field normal to the Si/SiO2 interface. The effect of trapped charges in the oxide on the mobility degradation is rather insignificant, which is attributed to the location of trapped charges from the Si/SiO2 interface. The dependence of mobility degradation on inversion layer electron density has also been explained using a transport theory based on two-dimensional electron gas. (C) 1995 American Institute of Physics.

引用

页码：3252 / 3257

页数：6

共 28 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].