Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

被引：30

作者：

Kim, DJ ^{[1
]}

Moon, YT

Song, KM

Lee, IW

Park, SJ

机构：

[1] Kwangji Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Kwangji Inst Sci & Technol, Ctr Optoelect Mat Res, Kwangju 500712, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 02期

关键词：

InGaN; metalorganic chemical vapor deposition (MOCVD); x-ray diffraction (XRD); photoluminescence (PL);

D O I：

10.1007/s11664-001-0107-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate in the MOCVD system.

引用

页码：99 / 102

页数：4

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