Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport

被引:26
作者
Kawachi, G [1 ]
Graeff, CFO [1 ]
Brandt, MS [1 ]
Stutzmann, M [1 ]
机构
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 11期
关键词
D O I
10.1103/PhysRevB.54.7957
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Carrier transport processes in hydrogenated amorphous silicon-based thin-film transistors (a-Si:H TFT's) are investigated by spin-dependent transport (SDT). Spin-dependent photoconductivity (SDPC) signals arising from less than 10(6) spins in a small transistor are detected with an adequate signal-to-noise ratio. SDPC measurements reveal two different limiting steps for the light-induced leakage current in TFT's depending on the gate voltage: bulk recombination in undoped a-Si:H and recombination near the source junction. Also, the leakage current mechanism under high source-drain fields is identified by SDT measurements in the dark as electron hopping via defect states located at the interface between undoped a-Si:H and the passivation silicon nitride layer. Both silicon dangling bonds and nitrogen dangling bonds seem to be involved in the electron hopping process. At temperatures below 100 K, spin-dependent hopping of electrons in conduction-band tail states is observed. The change of the dominant transport path from extended state conduction to variable range hopping conduction with decreasing temperature is confirmed by SDT measurements.
引用
收藏
页码:7957 / 7964
页数:8
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