SPIN-DEPENDENT RECOMBINATION IN IRRADIATED SI/SIO2 DEVICE STRUCTURES

被引:59
作者
VRANCH, RL [1 ]
HENDERSON, B [1 ]
PEPPER, M [1 ]
机构
[1] UNIV STRATHCLYDE,DEPT PHYS & APPL PHYS,GLASGOW G4 0NG,SCOTLAND
关键词
D O I
10.1063/1.99192
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1161 / 1163
页数:3
相关论文
共 20 条
[1]   A STUDY OF THIN SILICON DIOXIDE FILMS USING INFRARED-ABSORPTION TECHNIQUES [J].
BOYD, IW ;
WILSON, JIB .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4166-4172
[2]   SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].
BROWER, KL .
APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113
[3]   OPTICAL ENHANCEMENT OF THE ELECTRON-PARAMAGNETIC RESONANCE SIGNAL FROM SI-111 CENTERS AT THE SI-SIO2 INTERFACE [J].
CAPLAN, PJ ;
POINDEXTER, EH .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :522-524
[4]  
CAPLAN PJ, 1980, PHYSICS MOS INSULATO, P306
[5]  
CAPLAN PJ, 1981, J APPL PHYS, V52, P879
[6]   OPTICALLY INDUCED ELECTRON-SPIN RESONANCE AND SPIN-DEPENDENT RECOMBINATION IN SI/SIO2 [J].
HENDERSON, B .
APPLIED PHYSICS LETTERS, 1984, 44 (02) :228-230
[7]  
KAPLAN D, 1978, J PHYS LETT-PARIS, V39, pL51, DOI 10.1051/jphyslet:0197800390405100
[8]   SPIN DEPENDENT SURFACE RECOMBINATION IN SILICON P-N-JUNCTIONS - THE EFFECT OF IRRADIATION [J].
KAPLAN, D ;
PEPPER, M .
SOLID STATE COMMUNICATIONS, 1980, 34 (10) :803-805
[9]   THE OPTICALLY DETECTED MAGNETIC-RESONANCE OF DANGLING BONDS AT THE SI/SIO2 INTERFACE [J].
LEE, KM ;
KIMERLING, LC ;
BAGLEY, BG ;
QUINN, WE .
SOLID STATE COMMUNICATIONS, 1986, 57 (08) :615-617
[10]   RADIATION-INDUCED TRIVALENT SILICON DEFECT BUILDUP AT THE SI-SIO2 INTERFACE IN MOS STRUCTURES [J].
LENAHAN, PM ;
BROWER, KL ;
DRESSENDORFER, PV ;
JOHNSON, WC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4105-4106