Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm

被引：120

作者：

Hiskett, PA ^{[1
]}

Buller, GS

Loudon, AY

Smith, JM

Gontijo, I

Walker, AC

Townsend, PD

Robertson, MJ

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Corning Res Ctr, Ipswich IP5 3RE, Suffolk, England

来源：

APPLIED OPTICS | 2000年 / 39卷 / 36期

关键词：

D O I：

10.1364/AO.39.006818

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 mum is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented. (C) 2000 Optical Society of America OCIS codes: 230.0040, 230.5170, 230.5160, 270.5290.

引用

页码：6818 / 6829

页数：12

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