Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm

被引:120
作者
Hiskett, PA [1 ]
Buller, GS
Loudon, AY
Smith, JM
Gontijo, I
Walker, AC
Townsend, PD
Robertson, MJ
机构
[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Corning Res Ctr, Ipswich IP5 3RE, Suffolk, England
关键词
D O I
10.1364/AO.39.006818
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 mum is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented. (C) 2000 Optical Society of America OCIS codes: 230.0040, 230.5170, 230.5160, 270.5290.
引用
收藏
页码:6818 / 6829
页数:12
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