Effect of ionization potential change in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) on the performance of polymer light emitting diodes due to its reaction with indium tin oxide

被引：24

作者：

Chang, Chih-Hao ^{[1
]}

Chen, Show-An ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30043, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 10期

关键词：

D O I：

10.1063/1.2759474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) is usually used to facilitate hole injection in polymer light emitting diodes. The authors used ultraviolet photoelectron spectroscopy to investigate ionization potential (IP) changes of PEDOT:PSS spin coated on indium tin oxide (ITO), and found that increasing delay time to baking after spin coating decreases its IP and increases hole injection barrier to emitting polymer. The IP change is attributed to dedoping of PEDOT in PEDOT:PSS due to reaction of ITO with protons in PSS and those in doped PEDOT in the presence of water. To get good performance of bipolar device, PEDOT:PSS film should be baked right after spin coating. (C) 2007 American Institute of Physics.

引用

页数：3

共 9 条

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