Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes

被引：47

作者：

Kuball, M

Hayes, JM

Shi, Y

Edgar, JH

Prins, AD

van Uden, NWA

Dunstan, DJ

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA

[3] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 231卷 / 03期

关键词：

characterization; single crystal growth; nitrides; semiconducting aluminium compounds;

D O I：

10.1016/S0022-0248(01)01469-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the Raman analysis of single-crystalline bulk AIN. AIN phonon modes were investigated as a function of temperature and hydrostatic pressure. Phonon decay channels were studied via the AIN Raman linewidth. Mode Gruneisen parameters describing the low-pressure behavior of the AIN phonon modes were determined and used to estimate hydrostatic stress in amber discolored AIN substrates. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：391 / 396

页数：6

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