Temperature dependence of the phonons of bulk AlN

被引：63

作者：

Hayes, JM

Kuball, M

Shi, Y

Edgar, JH

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 7B期

关键词：

bulk AlN; phonons; Raman scattering; temperature; monitoring;

D O I：

10.1143/JJAP.39.L710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-Raman scattering measurements were performed on bulk wurtzite AIN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AIN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E-2 phonon of -(2.22 +/- 0.02) x 10(-2) cm(-1)/K was determined for high temperatures, which is similar to values reported fur bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.

引用

页码：L710 / L712

页数：3

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