Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing

被引：29

作者：

Djie, HS ^{[1
]}

Mei, T ^{[1
]}

Arokiaraj, J ^{[1
]}

Sookdhis, C ^{[1
]}

Yu, SF ^{[1
]}

Ang, LK ^{[1
]}

Tang, XH ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Photon Res Ctr, Singapore 639798, Singapore

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2004年 / 40卷 / 02期

关键词：

inductively coupled plasma; photonic integrated circuits; quantum well; quantum-well intermixing (QWI);

D O I：

10.1109/JQE.2003.821542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma-enhanced quantum-well intermixing (QWI) has been developed for tuning the bandgap of InGaAs-InP material using an inductively coupled plasma system. The application of inductively coupled plasma enhances the interdiffusion of point defects resulting in a higher degree of intermixing. Based on a semi-empirical model of QW interdiffusion, the bandgap blue-shift with respect to the plasma exposure time and inductively coupled plasma energy has been analyzed. The theoretical results appear to be in good agreement with the experimental data of the intermixed samples. The model serves as a good simulation tool to explain the intermixing mechanism and further to optimize the intermixing process for the fabrication of the photonic integrated circuits.

引用

页码：166 / 174

页数：9

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