Radiation enhanced diffusion of low energy ion-induced damage

被引：34

作者：

Chen, CH ^{[1
]}

Green, DL ^{[1
]}

Hu, EL ^{[1
]}

Ibbetson, JP ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.118118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the influence of concurrent above-band-gap laser illumination on the damage profile of GaAs/AlGaAs heterostructures subject to low energy (sub-keV) Ar+ ion bombardment. A dramatic change in damage profile was observed for these samples, compared with those that were not laser illuminated, and the degradation increases with the illuminated power intensity. Below-band-gap illumination results in a minimal increase in damage profile. Such results indicate the possibility of radiation-enhanced diffusion of defects, and may explain the observed high defect diffusivity at room temperature. (C) 1996 American Institute of Physics.

引用

页码：58 / 60

页数：3

共 13 条

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