EFFECT OF SUPERLATTICES ON THE LOW-ENERGY ION-INDUCED DAMAGE IN GAAS/AL(GA)AS STRUCTURES - CHANNELING OR DIFFUSION

被引：25

作者：

GREEN, DL ^{[1
]}

HU, EL ^{[1
]}

STOFFEL, NG ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3311 / 3316

页数：6

共 14 条

[1] BIERSACK JP, 1980, NUCL INSTRUM METHODS, V174, P289
[2] FIRSOV OB, 1959, ZH EKSP TEOR FIZ, V36, P1076
[3] DEFECT STUDY IN GAAS BOMBARDED BY LOW-ENERGY FOCUSED ION-BEAMS
GAMO, K
MIYAKE, H
YUBA, Y
NAMBA, S
KASAHARA, H
SAWARAGI, H
AIHARA, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2124 - 2127
[4] ENERGY-DEPENDENCE AND DEPTH DISTRIBUTION OF DRY ETCHING-INDUCED DAMAGE IN III/V SEMICONDUCTOR HETEROSTRUCTURES
GERMANN, R
FORCHEL, A
BRESCH, M
MEIER, HP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1475 - 1478
[5] CHARACTERIZATION OF LOW-ENERGY ION-INDUCED DAMAGE USING THE MULTIPLE-QUANTUM-WELL PROBE TECHNIQUE WITH AN INTERVENING SUPERLATTICE
GREEN, DL
HU, EL
PETROFF, PM
LIBERMAN, V
NOONEY, M
MARTIN, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2249 - 2253
[6] CALIBRATION OF THE MULTIPLE QUANTUM-WELL PROBE TECHNIQUE FOR DRY-ETCH-INDUCED DAMAGE ANALYSIS
GREEN, DL
SKIDMORE, JA
LISHAN, DG
HU, EL
PETROFF, PM
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1253 - 1255
[7] GREEN DL, 1988, 15TH P S GAAS REL CO, P347
[8] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
PETROFF, PM
MILLER, RC
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219
[9] RADICAL BEAM ION-BEAM ETCHING OF GAAS
SKIDMORE, JA
COLDREN, LA
HU, EL
MERZ, JL
ASAKAWA, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1885 - 1888
[10] SMIRNOV LS, 1983, SURVEY SEMICONDUCTOR, P9

← 1 2 →