RADICAL BEAM ION-BEAM ETCHING OF GAAS

被引：25

作者：

SKIDMORE, JA ^{[1
]}

COLDREN, LA ^{[1
]}

HU, EL ^{[1
]}

MERZ, JL ^{[1
]}

ASAKAWA, K ^{[1
]}

机构：

[1] NEC CORP, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1885 / 1888

页数：4

共 16 条

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[2] ASAKAWA K, UNPUB
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[5] ION-BEAM ENHANCED MAGNETRON REACTIVE ION ETCHING
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[6] CHINN JD, 1983, J VAC SCI TECHNOL A, V1, P1701
[7] DOUGHTY GF, 1988, J VAC SCI TECHNOL B, V6, P127
[8] MICROWAVE DISCHARGE CAVITIES OPERATING AT 2450 MHZ
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[10] HOT JET ETCHING OF GAAS AND SI
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