Grain boundary field electron emission from CVD diamond films

被引：80

作者：

Karabutov, AV ^{[1
]}

Frolov, VD ^{[1
]}

Pimenov, SM ^{[1
]}

Konov, VI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

来源：

关键词：

diamond films; Fowler-Nordheim injection; morphology; scanning tunneling microscopy;

D O I：

10.1016/S0925-9635(98)00308-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results are reported on microscopic study of electronic and structural properties of field emission centers for chemical vapor deposition diamond films. The field electron emission (FEE) for the best films studied was observed at >3 V mu m(-1), and ultralow (<0.1 eV) values of effective work function derived from Fowler-Nordheim plot fitting are discussed. A specially designed high vacuum scanning tunneling-field emission microscope was applied for simultaneous mapping of FEE intensity, morphology, work function and local electroconductivity evaluation. It was found that the emission centers were not associated with sharp morphology protrusions. On the contrary, they correspond to morphology pits (grain boundaries) which also show a low value of the work function. A mechanism of the low-FEE near grain boundaries including field enhancement of narrow conductive channels between insulating diamond grains is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：763 / 767

页数：5

共 31 条

[1]

Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173

[2]

[Anonymous], 1986, PROCESSES HIGH VOLTA

[3] Electron emission measurements from CVD diamond surfaces [J].

Bozeman, SP ;

Baumann, PK ;

Ward, BL ;

Powers, MJ ;

Cuomo, JJ ;

Nemanich, RJ ;

Dreifus, DL .

[4]

FROLOV VD, UNPUB J PHYS D

[5] DIAMOND COLD-CATHODE [J].

GEIS, MW ;

EFREMOW, NN ;

WOODHOUSE, JD ;

MCALEESE, MD ;

MARCHYWKA, M ;

SOCKER, DG ;

HOCHEDEZ, JF .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459

[6] ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTER H-2, O-2 AND CS TREATMENT [J].

GEIS, MW ;

TWICHELL, JC ;

MACAULAY, J ;

OKANO, K .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1328-1330

[7] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].

HIMPSEL, FJ ;

KNAPP, JA ;

VANVECHTEN, JA ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1979, 20 (02) :624-627

[8] FIELD-EMISSION FROM P-TYPE POLYCRYSTALLINE DIAMOND FILMS [J].

HONG, D ;

ASLAM, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :427-430

[9] MONTE-CARLO SIMULATION OF HOT-ELECTRON CHARGE-TRANSPORT IN DIAMOND UNDER AN INTERNAL ELECTRIC-FIELD [J].

HUANG, ZH ;

CHUNG, MS ;

CUTLER, PH ;

MISKOVSKY, NM ;

SULLIVAN, TE .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1235-1237

[10] Electron emission characterization of diamond thin films grown from a solid carbon source [J].

Jou, S ;

Doerr, HJ ;

Bunshah, RF .

THIN SOLID FILMS, 1996, 280 (1-2) :256-261

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