Device simulations of nanocrystalline silicon thin-film transistors

被引：10

作者：

Dosev, D

Iñíguez, B

Marsal, LF

Pallares, J

Ytterdal, T

机构：

[1] Univ Rovira & Virgili, Dept Elect Elect & Automat Engn, ETSE, Tarragona 43007, Spain

[2] Norwegian Univ Sci & Technol, Dept Phys Elect, N-7491 Trondheim, Norway

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 11期

关键词：

TFT; nanocrystalline silicon; density of states;

D O I：

10.1016/S0038-1101(03)00167-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the results of numerical simulations of inverted-staggered thin-film transistors (TFTs) with nanocrystalline silicon channel, using the semiconductor device simulator ATLAS from Silvaco. We study the influence of the density of the acceptor-like defect states concentration on the transistors' transconductance. Analysis of the free and the trapped carriers' concentrations at different gate voltages shows that the value of density of defect states determines the behaviour of nanocrystalline silicon TFTs between amorphous and polycrystalline silicon TFTs. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1917 / 1920

页数：4

共 12 条

[1] Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique [J].

Cabarrocas, PRI ;

Brenot, R ;

Bulkin, P ;

Vanderhaghen, R ;

Drévillon, B ;

French, I .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :7079-7082

[2] DC SPICE model for nanocrystalline and microcrystalline silicon TFTs [J].

Dosev, D ;

Ytterdal, T ;

Pallares, J ;

Marsal, LF ;

Iñíguez, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (11) :1979-1984

[3]

DOSEV D, THESIS U POLITECNICA

[4] Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition [J].

Dosev, DK ;

Puigdollers, J ;

Orpella, A ;

Voz, C ;

Fonrodona, M ;

Soler, D ;

Marsal, LF ;

Pallarès, J ;

Bertomeu, J ;

Andreu, J ;

Alcubilla, R .

THIN SOLID FILMS, 2001, 383 (1-2) :307-309

[5] DEFECT POOL IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

VANBERKEL, C ;

FRANKLIN, AR ;

DEANE, SC ;

MILNE, WI .

PHYSICAL REVIEW B, 1992, 45 (08) :4160-4170

[6] Thin film transistors obtained by hot wire CVD [J].

Puigdollers, J ;

Orpella, A ;

Dosev, D ;

Voz, C ;

Peiró, D ;

Pallarés, J ;

Marsal, LF ;

Bertomeu, J ;

Andreu, J ;

Alcubilla, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :1304-1309

[7] Microcrystalline silicon thin film transistors obtained by hot-wire CVD [J].

Puigdollers, J ;

Dosev, D ;

Orpella, A ;

Vox, C ;

Peiro, D ;

Bertomeu, J ;

Marsal, LF ;

Pallares, J ;

Andreu, J ;

Alcubilla, R .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :526-529

[8] Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition [J].

Schropp, REI ;

Feenstra, KE ;

Molenbroek, EC ;

Meiling, H ;

Rath, JK .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 76 (03) :309-321

[9]

SHUR M, 1990, PHYSICS SEMICONDUCTO

[10]

*SILVACO INC, 2000, ATL US MAN, V1

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