Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires

被引:27
作者
Sharma, S
Kamins, TI
Islam, MS
Williams, RS
Marshall, AF
机构
[1] Hewlett Packard Labs, Quantum Sci Res, Palo Alto, CA 94304 USA
[2] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
关键词
bridging; nanowires; chemical vapor deposition; sensors;
D O I
10.1016/j.jcrysgro.2005.04.039
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Lateral, single-crystalline silicon nanowires were synthesized using chemical vapor deposition catalyzed by gold nanoparticles deposited on one of the vertical {1 1 1} sidewalls of trenches etched in Si(0 1 1) substrates. Upon encountering the opposing sidewalls of the trenches, the lateral nanowires formed a mechanically strong connection. The bridging connection at the opposing sidewall was observed using high-resolution transmission electron microscopy (TEM) to be epitaxial and unstrained silicon-to-silicon. Using energy-dispersive X-ray spectroscopy in TEM, gold could not be detected at the interface region where the nanowires formed a connection with the opposing sidewall silicon deposit but was detected on the surface adjacent to the impingement region. We postulate that a silicon-to-silicon connection is formed as the gold-silicon liquid eutectic is forced out of the region between the growing nanowire and the opposing sidewall. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:562 / 568
页数:7
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