LA-ICP-MS, IC and DPASV-DPCSV determination of metallic impurities in solar-grade silicon

被引:13
作者
Buldini, PL
Mevoli, A
Sharma, JL
机构
[1] CNR Lamel, I-40129 Bologna, Italy
[2] PASTIS SCpA, I-72100 Brindisi, Italy
[3] Univ Delhi, KM Coll, Delhi 110007, India
关键词
solar-grade silicon; metallic impurities; laser ablation inductively coupled plasma mass spectrometry; ion chromatography; voltammetry;
D O I
10.1016/S0039-9140(98)00065-4
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Stringent specifications are laid down for the silicon used for solar cells. The present work deals with the application of different techniques to the simultaneous determination of most common metallic impurities like iron, copper, nickel, zinc, lead and cadmium, in industrial process control. Laser ablation inductively coupled plasma mass spectrometry is quite expensive in apparatus, but it directly performs the analysis of solid silicon with very good sensitivity, even if coupled to considerable standard deviation, probably due to the material defects. Both ion chromatography and voltammetry need sample pre-treatment, but they are characterized by cheap and simple apparatus, suitable detection limits, good sensitivity and small standard deviation. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:203 / 212
页数:10
相关论文
共 12 条
  • [1] DETERMINATION OF TRANSITION-METALS IN NATURAL-WATERS BY MICROPROCESSOR-CONTROLLED VOLTAMMETRY IN COMPARISON WITH ZEEMAN GRAPHITE-FURNACE ATOMIC-ABSORPTION SPECTROMETRY
    BULDINI, PL
    FERRI, D
    NOBILI, D
    [J]. ELECTROANALYSIS, 1991, 3 (06) : 559 - 566
  • [2] Application of ion chromatography to the analysis of high-purity CdTe
    Buldini, PL
    Cavalli, S
    Mevoli, A
    Milella, E
    [J]. JOURNAL OF CHROMATOGRAPHY A, 1996, 739 (1-2) : 131 - 137
  • [3] POLAROGRAPHIC-DETERMINATION OF METALLIC IMPURITIES ON LAPPED SILICON-WAFERS
    BULDINI, PL
    TOPONI, A
    ZINI, Q
    [J]. MICROCHEMICAL JOURNAL, 1988, 38 (02) : 241 - 245
  • [4] ANODIC-OXIDATION OF POLYSILICON
    BULDINI, PL
    ZINI, Q
    FERRI, D
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1062 - 1064
  • [5] APPLICATION OF ETV-ICPMS IN SEMICONDUCTOR PROCESS-CONTROL
    HUB, W
    AMPHLETT, H
    [J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1994, 350 (10-11): : 587 - 592
  • [6] NEUTRON-ACTIVATION ANALYSIS OF SEMICONDUCTOR-MATERIALS
    LAKOMAA, EL
    MANNINEN, P
    ROSENBERG, RJ
    ZILLIACUS, R
    [J]. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1993, 168 (02): : 357 - 366
  • [7] SEMICONDUCTOR SILICON SAMPLES FOR INTERLABORATORY COMPARISON
    NIESE, S
    ICKER, K
    BIRNSTEIN, D
    DUBNACK, J
    BOTTGER, ML
    [J]. ISOTOPENPRAXIS, 1989, 25 (06): : 237 - 239
  • [8] Perkins WT., 1995, MICROPROBE TECHNIQUE, P291, DOI DOI 10.1007/978-1-4615-2053-5_7
  • [9] PROTASOV VG, 1989, ZAVODSK LAB, V55, P54
  • [10] DETERMINATION OF IRON IN SEMICONDUCTOR-GRADE SILICON BY FURNACE ATOMIC-ABSORPTION SPECTROMETRY
    STEWART, DA
    NEWTON, DC
    [J]. ANALYST, 1983, 108 (1293) : 1450 - 1458