Mechanism for puddle formation in graphene

被引：27

作者：

Adam, S. ^{[1
]}

Jung, Suyong ^{[1
,2
]}

Klimov, Nikolai N. ^{[1
,2
,3
]}

Zhitenev, Nikolai B. ^{[1
]}

Stroscio, Joseph A. ^{[1
]}

Stiles, M. D. ^{[1
]}

机构：

[1] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

[2] Univ Maryland, Maryland NanoCtr, College Pk, MD 20472 USA

[3] NIST, Phys Measurement Lab, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 23期

关键词：

SCANNING-TUNNELING-MICROSCOPY; ELECTRONIC-PROPERTIES; BORON-NITRIDE; TRANSPORT;

D O I：

10.1103/PhysRevB.84.235421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles that determine the properties of graphene at low carrier density. However, the details of the puddle formation have remained elusive. We demonstrate numerically that in sharp contrast to monolayer graphene, the normalized autocorrelation function for the puddle landscape in bilayer graphene depends only on the distance between the graphene and the source of the long-ranged impurity potential. By comparing with available experimental data, we find quantitative evidence for the implied differences in scanning tunneling microscopy measurements of electron and hole puddles for monolayer and bilayer graphene in nominally the same disorder potential.

引用

页数：6

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