A very sensitive porous silicon based humidity sensor

被引：50

作者：

Di Francia, G ^{[1
]}

Castaldo, A ^{[1
]}

Massera, E ^{[1
]}

Nasti, I ^{[1
]}

Quercia, L ^{[1
]}

Rea, I ^{[1
]}

机构：

[1] RC ENEA, I-80055 Naples, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2005年 / 111卷

关键词：

RH; flumidity; porous silicon; diode; aging;

D O I：

10.1016/j.snb.2005.06.048

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A relative humidity (RH) sensor device based on n-type porous silicon has been designed, fabricated and characterized. The simple device is a diode reverse dc biased, exhibiting an extremely high sensitivity in ambient air and a large operating range (30-70% RH). Aging and NO2 interference on the sensor performance have been also investigated. (c) 2005 Elsevier B.V. All rights reserved.

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收藏

页码：135 / 139

页数：5

相关论文

共 15 条

[1]

Carr-Brion K., 1986, MOISTURE SENSORS PRO

[2] Hydrogen sensing characteristics of Cu-PS-Si structures [J].

Dzhafarov, TD ;

Omur, BC ;

Oruc, C ;

Allahverdiev, ZA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (23) :3122-3126

[3] Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2 [J].

Garcia, C ;

Garrido, B ;

Pellegrino, P ;

Ferre, R ;

Moreno, JA ;

Morante, JR ;

Pavesi, L ;

Cazzanelli, M .

APPLIED PHYSICS LETTERS, 2003, 82 (10) :1595-1597

[4] Polymeric humidity sensor based on laser carbonized polyimide substrate [J].

Ingram, JM ;

Greb, M ;

Nicholson, JA ;

Fountain, AW .

SENSORS AND ACTUATORS B-CHEMICAL, 2003, 96 (1-2) :283-289

[5] Some investigation results of the instability of humidity sensors based on alumina and porous silicon materials [J].

Mai, LH ;

Hoa, PTM ;

Binh, NT ;

Ha, NTT ;

An, DK .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 66 (1-3) :63-65

[6] INFLUENCE OF HUMIDITY ON TRANSPORT IN POROUS SILICON [J].

MARES, JJ ;

KRISTOFIK, J ;

HULICIUS, E .

THIN SOLID FILMS, 1995, 255 (1-2) :272-275

[7] Improvement of stability and recovery time in porous-silicon-based NO2 sensor [J].

Massera, E ;

Nasti, I ;

Quercia, L ;

Rea, I ;

Di Francia, G .

SENSORS AND ACTUATORS B-CHEMICAL, 2004, 102 (02) :195-197

[8] On the nature of metal-porous Si-single crystal silicon (MPS) diodes [J].

Molnár, K ;

Mohácsy, T ;

Abdulhadi, AH ;

Volk, J ;

Bársony, I .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (02) :446-451

[9]

OHALLORAN GM, 1999, P EUR 13 HAG NETH 12, P117

[10] Recent achievements in miniaturised humidity sensors - a review of transduction techniques [J].

Rittersma, ZM .

SENSORS AND ACTUATORS A-PHYSICAL, 2002, 96 (2-3) :196-210