Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes

被引：90

作者：

Pursiainen, O ^{[1
]}

Linder, N ^{[1
]}

Jaeger, A ^{[1
]}

Oberschmid, R ^{[1
]}

Streubel, K ^{[1
]}

机构：

[1] OSRAM Opto Semicond, D-93049 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 18期

关键词：

D O I：

10.1063/1.1413721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report new methods of identifying the effects of aging on the light-current (L-I) and current-voltage (I-V) characteristics of AlInGaP light-emitting diodes (LEDs). We believe that these methods are also applicable to other III-V compound semiconductors. We observe a broadening of the nonlinear range of the L-I characteristic accompanied by a shift to higher currents in the I-V characteristic. These features can be attributed to an increase of nonradiative recombination processes in the active layer. A second process, however, can lead to an increase of the LED output power. We conclude from an analysis of the current dependence that this process is due to a different mechanism. (C) 2001 American Institute of Physics.

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页码：2895 / 2897

页数：3

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