Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing

被引：14

作者：

Herrick, RW ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used a bias-induced annealing process co improve the initial performance and the reliability of red (680 nm) Ga.46In.54P vertical-cavity surface-emitting lasers. Measurements showed improved cathodoluminescence efficiency and increased current collection efficiency after the anneal. Trap concentration is believed to be reduced by the bias-induced annealing process. (C) 1998 American Institute of Physics.

引用

页码：1799 / 1801

页数：3

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