Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches

被引：108

作者：

Li, Mi ^{[1
]}

Zhuge, Fei ^{[1
]}

Zhu, Xiaojian ^{[1
]}

Yin, Kuibo ^{[1
]}

Wang, Jinzhi ^{[1
]}

Liu, Yiwei ^{[1
]}

He, Congli ^{[1
]}

Chen, Bin ^{[1
]}

Li, Run-Wei ^{[1
]}

机构：

[1] CAS, NIMTE, Ningbo 315201, Zhejiang, Peoples R China

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 42期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; MULTIFERROICS; SYSTEM;

D O I：

10.1088/0957-4484/21/42/425202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The resistive switching (RS) characteristics of a Bi0.95La0.05FeO3 (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages < 1 V. The RS effect can be attributed to the formation/rupture of nanoscale metal filaments due to the diffusion of the TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

引用

页数：5

共 26 条

[1] Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films [J].