Evaluation of trifluoroiodomethane as SiO2 etchant for global warming reduction

被引：33

作者：

Fracassi, F ^{[1
]}

d'Agostino, R ^{[1
]}

机构：

[1] Univ Bari, Dipartmento Chim, CNR, Ctr Studio Chim Plasmi, I-70126 Bari, Italy

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.590303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The utilization of CF3I in the plasma assisted dry etching of SiO2 has been studied in order to reduce the environmental impact of microelectronics device fabrication. The results show that CF3I is a promising substitute of CF4 in oxide etching since its utilization reduces 3-3.5 times the contribution to the global warming, nevertheless it still has a consistent effect on the environment for the plasma assisted formation of perfluorocompounds. (C) 1998 American Vacuum Society.

引用

页码：1867 / 1872

页数：6

共 13 条

[1]

[Anonymous], 1991, CLIMATE CHANGE IPCC

[2] ION RESPONSE TO PLASMA EXCITATION-FREQUENCY [J].