Probing the excited state distributions of CdTe/ZnTe self-assembled quantum dots using resonant Raman scattering

被引：5

作者：

Abdi, A ^{[1
]}

Hoang, TB

Mackowski, S

Smith, LM

Jackson, HE

Yarrison-Rice, JM

Kossut, J

Karczewski, G

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[3] Polish Acad Sci, Inst Phys, Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2123378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant Raman scattering is a sensitive means to probe electronic states in semiconductor materials even when such states are not accessible either through photoluminescence or transport techniques. We show that resonant Raman scattering can be used to probe the excited state distribution of CdTe/ZnTe quantum dots at room temperature. In particular we apply this technique to study the changes of such quantum dots after rapid thermal annealing. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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