Quantum size and shape effects on the excited states of InxGa1-xAs quantum dots -: art. no. 245337

被引：29

作者：

Bissiri, M

von Högersthal, GBH

Capizzi, M

Frigeri, P

Franchi, S

机构：

[1] Univ Roma La Sapienza, Ist Nazl Fis Mat, Dipartimento Fis, I-00185 Rome, Italy

[2] CNR, MASPEC, I-43010 Parma, Italy

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.64.245337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant photoluminescence and excitation photoluminescence experiments have been carried out at low temperature in a number of (InGa)As/GaAs heterostructures. This has allowed us to investigate the dependence of the excited state energy of self-aggregated quantum dots (QD's) on shape and size. Experimental results are compared with theoretical estimates of the QD density of states, and agreement and discrepancies with different theoretical approaches are highlighted. Finally, present results support recent reports of a strong In interdiffusion.

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页数：8

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