Optical properties of InAs quantum dots formed on GaAs pyramids

被引：13

作者：

An, HY ^{[1
]}

Motohisa, J

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of InAs quantum dots on GaAs pyramidal structures formed by selective area metal organic vapor phase epitaxy have been studied with low-temperature excitation powerdependent microphotoluminescence (mu-PL) and microphotoluminescence excitation (mu-PLE) spectroscopy. The power-dependent mu-PL spectra show well-defined ground and excited states whose interlevel energy spacings are estimated to be about 21 meV. These experimental results demonstrate the discrete nature of zero-dimensional density of states in position and number controlled InAs quantum dots (QDs) selectively grown on GaAs pyramids. We have also observed relative strong PLE peaks which are ascribed to the multiple longitudinal optical phonon resonance. Excited states and carrier relaxation of InAs QDs formed on GaAs pyramids are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)02229-4].

引用

页码：385 / 387

页数：3

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