Optical absorption cross section of quantum dots

被引:38
作者
Osborne, SW
Blood, P
Smowton, PM
Xin, YC
Stintz, A
Huffaker, D
Lester, LF
机构
[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3YB, S Glam, Wales
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
D O I
10.1088/0953-8984/16/35/016
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have measured the modal optical absorption spectrum of a three-layer system of InAs quantum dots in a slab waveguide geometry, observing distinct absorption peaks for the ground and excited states. The spectrally integrated absorption cross section for the ground and first excited states are determined to be sigma(0) = (0.43 +/- 0.1) x 10(-15) and (0.92 +/- 0.2) x 10(-15) cm(2) eV, respectively. Assuming that the spectral shapes are determined primarily by the inhomogeneous size distribution of dots the Gaussian linewidths are 16 and 19 meV for the ground and first excited state transitions, respectively. The peak ground state absorption cross section is 1.1 x 10(-14) cm(2). The ground state spectrally integrated cross section estimated by a theory with the envelope function overlap integral taken to be unity is 0.40 x 10(-15) cm(2) eV, in agreement with the measured value. We conclude that on the basis of the spectrally integrated cross section there is no evidence for a substantial reduction in the strength of the fundamental light-matter interaction in dots compared with systems of higher dimensionality.
引用
收藏
页码:S3749 / S3756
页数:8
相关论文
共 9 条
[1]  
ANDREEV AD, COMMUNICATION
[2]   Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser [J].
Asryan, LV ;
Grundmann, M ;
Ledentsov, NN ;
Stier, O ;
Suris, RA ;
Bimberg, D .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1666-1668
[3]   Exploitation of optical interconnects in future server architectures [J].
Benner, AF ;
Ignatowski, M ;
Kash, JA ;
Kuchta, DM ;
Ritter, MB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2005, 49 (4-5) :755-775
[4]   Characterization of semiconductor laser gain media by the segmented contact method [J].
Blood, P ;
Lewis, GM ;
Smowton, PM ;
Summers, H ;
Thomson, J ;
Lutti, J .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) :1275-1282
[5]   On the dimensionality of optical absorption, gain, and recombination in quantum-confined structures [J].
Blood, P .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (03) :354-362
[6]  
COLEMAN JJ, 2000, IEEE J SEL TOP QUANT, V6
[7]   Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers [J].
Eliseev, PG ;
Li, H ;
Liu, GT ;
Stintz, A ;
Newell, TC ;
Lester, LF ;
Malloy, KJ .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) :135-142
[8]   Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers [J].
Matthews, DR ;
Summers, HD ;
Smowton, PM ;
Hopkinson, M .
APPLIED PHYSICS LETTERS, 2002, 81 (26) :4904-4906
[9]   Determination of single-pass optical gain and internal loss using a multisection device [J].
Thomson, JD ;
Summers, HD ;
Hulyer, PJ ;
Smowton, PM ;
Blood, P .
APPLIED PHYSICS LETTERS, 1999, 75 (17) :2527-2529