A combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers

被引：2

作者：

Chikyow, T ^{[1
]}

Ahmet, P ^{[1
]}

Nakajima, K ^{[1
]}

Koida, T ^{[1
]}

Takakura, M ^{[1
]}

Yoshimoto, M ^{[1
]}

Koinuma, H ^{[1
]}

机构：

[1] Natl Inst Res Inorgan Mat, COMET NIRIM, Tsukuba, Ibaraki 3050044, Japan

来源：

COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT II | 2001年 / 4281卷

关键词：

combinatorial; oxide; high dielectric; SrTiO3; CeO2; Si;

D O I：

10.1117/12.424754

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A combinatorial methodology was employed to investigate oxide materiats/semiconductor interfaces for future devices. For this purpose, a temperature gradient pulsed laser deposition to find optimum growth condition and transmission electron microscopy for structure and composition analysis were used. Newly proposed the "micro sampling method" with focused ion beam was applied to fabricate the specimen from the interested region in a shorter term. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. Arsenic was used to obtain a durable surface of Si in oxygen atmosphere. CeO2 and SrTiO3 were tried to grow and the interfaces were characterized using these method.

引用

页码：1 / 16

页数：16

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