The energy-driven hot-carrier degradation modes of nMOSFETs

被引：99

作者：

Guerin, Chloe ^{[1
]}

Huard, Vincent

Bravaix, Alain

机构：

[1] STMicroelectronics, Crolles2 Alliance, F-38926 Crolles, France

[2] NXP Semicond, F-38926 Crolles, France

[3] L2MP, UMR 6317, F-83000 Toulon, France

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2007年 / 7卷 / 02期

关键词：

age function; electron-electron scattering (EES); energy driven; hot carrier; metal-oxide-semiconductor (MOS); multiple vibrational excitation (MVE); reliability; transistor;

D O I：

10.1109/TDMR.2007.901180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we confirm that the energy is the driving force of hot-carrier effects. In high-energy long-channel case, the energy-driven paradigm allows to retrieve lucky electron model-like equations although the explanations are different. When the energy is lowered, high-energy electrons generated by electron-electron scattering become the dominant contribution to the degradation. Finally, for even lower energy, multiple vibrational excitation mechanism starts taking the lead.

引用

页码：225 / 235

页数：11

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