Operational experience with a valved antimony cracker source for use in molecular beam epitaxy

被引：14

作者：

Hall, E ^{[1
]}

Naone, R

English, JE

Blank, HR

Champlain, J

Kroemer, H

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.590252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present data for a valved antimony cracker for use in solid-source molecular beam epitaxy. Both aspects of this source, the cracker and the valve, are characterized. In particular, the valve is shown to exhibit excellent performance in terms of control and reproducibility. As a demonstration of the capabilities of this source, continuously graded layers from GaAs to GaSb were grown by using the source in conjunction with a valved arsenic cracker. We discuss the influence of this source and other growth parameters on composition, structure, and morphology of these graded layers. (C) 1998 American Vacuum Society. [S0734-211X(98)00205-4].

引用

页码：2660 / 2664

页数：5

共 12 条

[1] InAsSb-based mid-infrared lasers (3.8-3.9 mu m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition [J].

Allerman, AA ;

Biefeld, RM ;

Kurtz, SR .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :465-467

[2] Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy [J].

Blank, HR ;

Thomas, M ;

Wong, KC ;

Kroemer, H .

APPLIED PHYSICS LETTERS, 1996, 69 (14) :2080-2082

[3] Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport [J].

Blank, HR ;

Mathis, S ;

Hall, E ;

Bhargava, S ;

Behres, A ;

Heuken, M ;

Kroemer, H ;

Narayanamurti, V .

JOURNAL OF CRYSTAL GROWTH, 1998, 187 (01) :18-28

[4] IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

BOLOGNESI, CR ;

CAINE, EJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (01) :16-18

[5] INFLUENCE OF IMPACT IONIZATION ON THE DRAIN CONDUCTANCE IN INAS-ALSB QUANTUM-WELL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

BRAR, B ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) :548-550

[6] SPIRAL GROWTH OF GASB ON (001)GAAS USING MOLECULAR-BEAM EPITAXY [J].

BRAR, B ;

LEONARD, D .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :463-465

[7] Atomic antimony for molecular beam epitaxy of high quality III-V semiconductor alloys [J].

Brewer, PD ;

Chow, DH ;

Miles, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2335-2338

[8] 3.9-MU-M INASSB/ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS WITH HIGH-OUTPUT POWER AND IMPROVED TEMPERATURE CHARACTERISTICS [J].

CHOI, HK ;

TURNER, GW ;

LIAU, ZL .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2251-2253

[9] COMPOSITIONAL DEPENDENCE OF ALASYSB1-Y TERNARIES ON THE RATIO OF SB/AS FLUXES AND ON THE SUBSTRATE-TEMPERATURE [J].

NEMETH, S ;

GRIETENS, B ;

BORGHS, G .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3552-3553

[10] ON THE USE OF DIMERIC ANTIMONY IN MOLECULAR-BEAM EPITAXY [J].

ROUILLARD, Y ;

LAMBERT, B ;

TOUDIC, Y ;

BAUDET, M ;

GAUNEAU, M .

JOURNAL OF CRYSTAL GROWTH, 1995, 156 (1-2) :30-38

← 1 2 →