Transparent conductive Nb-doped TiO2 films deposited by direct-current magnetron sputtering using a TiO2-x target

被引：127

作者：

Sato, Yasushi ^{[1
]}

Akizuki, Hideo ^{[1
]}

Kamiyama, Toshihisa ^{[2
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Kanagawa 2298558, Japan

[2] AGC Ceram Co Ltd, Takasago, Hyogo 6768655, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 17期

关键词：

Nb-doped TiO2; transparent conductive oxide; TiO2 (anatase); dc magnetron sputtering; TiO2-x target;

D O I：

10.1016/j.tsf.2007.10.047

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Nb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using a slightly reduced TiO2-x target (2-x= 1.986; conductivity, 3.7 S cm(-1); density, 4.21 g/cm(3)) with Nb2O5 pellets on it. After post-annealing in a vacuum (6 x 10(-4) Pa) at 400 degrees C for 1 h, these films were crystallized into a polycrystalline anatase TiO2 structure. The resistivity of the films decreased to 1.3 x 10(-3) Omega cm with increasing Nb concentration up to 6.4 at.%, where the carrier density was 1.3 x 10(21) cm(-3) and the doping efficiency was estimated to be 65%. Such films exhibited high transparency of over 60-70% in the visible light region. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：5758 / 5762

页数：5

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