Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices

被引：65

作者：

Jun, SW ^{[1
]}

Seong, TY ^{[1
]}

Lee, JH ^{[1
]}

Lee, B ^{[1
]}

机构：

[1] ELECTR & TELECOMMUN RES INST,TAEJON 303505,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 24期

关键词：

D O I：

10.1063/1.115787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615 degrees OC by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615 degrees C, the VS decreased in thickness from similar to 15 to similar to 6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of similar to 300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615 degrees C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering. (C) 1996 American Institute of Physics.

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页码：3443 / 3445

页数：3

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