Oxygen behaviour during PIII-nitriding of aluminium

被引：12

作者：

Manova, D ^{[1
]}

Mändl, S

Rauschenbach, B

机构：

[1] Univ Augsburg, Inst Expt Phys 4, D-86135 Augsburg, Germany

[2] Inst Oberflachenmodifizierung, D-04318 Leipzig, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 178卷

关键词：

aluminium nitride; PIII; oxygen; ERDA;

D O I：

10.1016/S0168-583X(00)00487-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

During nitrogen plasma immersion ion implantation (PIII) treatment of pure aluminium at elevated temperatures between 250 degreesC and 500 degreesC, a rather high oxygen concentration of up to 20 at.% is observed in the treated samples, despite a base pressure of 10(-5) Pa and a working pressure of 0.2 Pa. This behaviour is caused by oxygen uptake via surface defects created by the ion bombardment, as shown in a control experiment with Ar implantation. A thermally activated oxygen diffusion tail is observed for nitrogen implantation, which can be explained by the diffusion of Al cations in AIN. (C) 2001 Elsevier Science B.V. Ail rights reserved.

引用

页码：291 / 296

页数：6

共 16 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[2] Plasma immersion ion implantation of pure aluminium at elevated temperatures [J].

Blawert, C ;

Mordike, BL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :873-878

[3] PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].

CONRAD, JR ;

RADTKE, JL ;

DODD, RA ;

WORZALA, FJ ;

TRAN, NC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4591-4596

[4]

EDGAR JH, 1996, GALLIUM NITRIDE RELA

[5]

FEHLNER FP, 1986, LOW TEMPERATURE OXID, P97

[6] Kinetics and characterization of plasma grown aluminium oxide [J].

Four, S ;

Devine, RAB ;

Vallier, L .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5570-5572

[7] CROSS-SECTIONS FOR 170.5-DEGREES BACKSCATTERING OF HE-4 FROM OXYGEN FOR HE-4 ENERGIES BETWEEN 1.8 AND 5.0 MEV [J].

LEAVITT, JA ;

MCINTYRE, LC ;

ASHBAUGH, MD ;

ODER, JG ;

LIN, Z ;

DEZFOULYARJOMANDY, B .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 44 (03) :260-265

[8] Surface modification of aluminium by plasma immersion ion implantation [J].

Manova, D ;

Huber, P ;

Mändl, S ;

Rauschenbach, B .

SURFACE & COATINGS TECHNOLOGY, 2000, 128 :249-255

[9] Electron-stimulated oxidation of silicon carbide [J].

McDaniel, GY ;

Fenstermaker, ST ;

Walker, DE ;

Lampert, WV ;

Mukhopadhyay, SM ;

Holloway, PH .

SURFACE SCIENCE, 2000, 445 (2-3) :159-166

[10]

Mondolfo LF, 1976, ALUMINUM ALLOYS STRU, P3

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