Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells

被引：18

作者：

Lo, I ^{[1
]}

Hsieh, KY

Hwang, SL

Tu, LW

Mitchel, WC

Saxler, AW

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Mat Sci, Kaohsiung 80424, Taiwan

[3] USAF, Mat Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells has been studied by using transmission electron microscopy (TEM) and van der Pauw Hall effect measurements. From the cross-sectional TEM imaging, we observed the threading dislocations which "screw'' through the multiple In0.24Ga0.76N/GaN quantum well. From the Hall effect measurement, we found that the Hall mobility decreases as the temperature decreases (mu similar to T-3/2) due to the threading dislocation scattering, and the Hall carrier concentration shows a transition from conduction-band transport to localized-state-hopping transport. The thermal activation energy of the residual donor level (probably Si! is about 20.2 meV. (C) 1999 American Institute of Physics. [S0003-6951(99)02415-8].

引用

页码：2167 / 2169

页数：3

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