Characteristics of Ru etching using ICP and helicon O2/Cl2 plasmas

被引：15

作者：

Kim, HW ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

THIN SOLID FILMS | 2005年 / 475卷 / 1-2期

关键词：

etching; ruthenium; plasma processing and deposition;

D O I：

10.1016/j.tsf.2004.07.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated and compared the characteristics of Ru etching by employing O-2/Cl-2 inductively coupled plasma (ICP) and helicon plasma. We have studied the variation of Ru etch rate and the Ru to SiO, etch selectivity with varying the gas flow ratio, the bias power, and the total gas flow rate. With optimizing the process for two different plasma sources, we have obtained higher etch rate of Ru electrode by using ICP, compared to by using helicon plasma. We demonstrated the etching slope of greater than 85degrees in terms of real pattern, using ICP. X-ray photoelectron spectroscopy (XPS) revealed that the Ru surface etched using ICP contained less amount of 0 element than using helicon plasma. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：32 / 35

页数：4

共 10 条

[1] Ultrathin Ta2O5 film capacitor with Ru bottom electrode [J].

Aoyama, T ;

Yamazaki, S ;

Imai, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (08) :2961-2964

[2]

BELL WE, 1963, J PHYS CHEM-US, V67, P2433

[3] High temperature platinum etching using Ti mask layer [J].

Kim, HW ;

Ju, BS ;

Nam, BY ;

Yoo, WJ ;

Kang, CJ ;

Ahn, TH ;

Moon, JT ;

Lee, MY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :2151-2155

[4] A study on the Pt electrode etching for 0.15 μm technologies [J].

Kim, HW ;

Ju, BS ;

Kang, CJ ;

Moon, JT .

MICROELECTRONIC ENGINEERING, 2003, 65 (1-2) :185-195

[5] Study of Ru etching using O2/Cl2 helicon plasmas [J].

Kim, HW ;

Han, JH ;

Ju, BS ;

Kang, CJ ;

Moon, JT .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (03) :249-253

[6] PLATINUM ETCHING AND PLASMA CHARACTERISTICS IN RF MAGNETRON AND ELECTRON-CYCLOTRON-RESONANCE PLASMAS [J].

NISHIKAWA, K ;

KUSUMI, Y ;

OOMORI, T ;

HANAZAKI, M ;

NAMBA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :6102-6108

[7] REACTIVE ION ETCHING OF RUO2, THIN-FILMS USING THE GAS-MIXTURE O-2 CF3CFH2 [J].

PAN, W ;

DESU, SB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3208-3213

[8] PLASMA-ETCHING OF RUO2 THIN-FILMS [J].

SAITO, S ;

KURAMASU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (01) :135-138

[9] HIGH-TEMPERATURE ETCHING OF PZT/PT/TIN STRUCTURE BY HIGH-DENSITY ECR PLASMA [J].

YOKOYAMA, S ;

ITO, Y ;

ISHIHARA, K ;

HAMADA, K ;

OHNISHI, S ;

KUDO, J ;

SAKIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :767-770

[10] Control of etch slope during etching of Pt in Ar/Cl-2/O-2 plasmas [J].

Yoo, WJ ;

Hahm, JH ;

Kim, HW ;

Jung, CO ;

Koh, YB ;

Lee, MY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B) :2501-2504

← 1 →