Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V-1 s-1

被引：64

作者：

Smith, Jeremy ^{[1
,2
]}

Bashir, Aneeqa ^{[1
,2
]}

Adamopoulos, George ^{[1
,2
]}

Anthony, John E. ^{[4
]}

Bradley, Donal D. C. ^{[1
,2
]}

Hamilton, R. ^{[3
]}

Heeney, Martin ^{[3
]}

McCulloch, Iain ^{[3
]}

Anthopoulos, Thomas D. ^{[1
,2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, Blackett Lab, London SW7 2AZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[4] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 32期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM TRANSISTORS; RECENT PROGRESS; ZINC-OXIDE; N-CHANNEL; SEMICONDUCTORS; POLYMER;

D O I：

10.1002/adma.201000195

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

引用

页码：3598 / +

页数：6

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