Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

被引：64

作者：

Adamopoulos, George ^{[1
]}

Bashir, Aneeqa ^{[1
]}

Woebkenberg, Paul H. ^{[1
]}

Bradley, Donal D. C. ^{[1
]}

Anthopoulos, Thomas D. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Blackett Lab, London SW7 2BW, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM-TRANSISTOR; OXIDE SEMICONDUCTOR;

D O I：

10.1063/1.3238466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3238466]

引用

页数：3

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