High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

被引：188

作者：

Bashir, Aneeqa ^{[1
]}

Woebkenberg, Paul H. ^{[1
]}

Smith, Jeremy ^{[1
]}

Ball, James M. ^{[1
]}

Adamopoulos, George ^{[1
]}

Bradley, Donal D. C. ^{[1
]}

Anthopoulos, Thomas D. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Blackett Lab, London SW7 2BW, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM TRANSISTORS; ROOM-TEMPERATURE; COMPLEMENTARY CIRCUITS; ELECTRICAL-PROPERTIES; TRANSPARENT; ZNO; SEMICONDUCTORS; DEPOSITION; ELECTRONICS; NANORODS;

D O I：

10.1002/adma.200803584

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The use of a simple deposition technique, namely spray pyrolysis, for the fabrication of high-mobility, low-voltage ZnO transistors and simple integrated circuits is demonstrated. The method is compatible with large-area deposition and could potentially address both the issue of manufacturing cost and high operating voltages.

引用

页码：2226 / +

页数：7

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