High-performance, spin-coated zinc tin oxide thin-film transistors

被引：174

作者：

Chang, Y. -J. ^{[1
]}

Lee, D. -H.

Herman, G. S.

Chang, C. -H.

机构：

[1] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97331 USA

[2] Hewlett Packard Corp, Corvallis, OR USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 05期

关键词：

D O I：

10.1149/1.2666588

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have developed a general and low-cost, solution-based process that is suitable for the deposition of transparent conducting oxides through spin-coating or inkjet printing under ambient conditions. Highly transparent (similar to 95% in the visible portion) zinc tin oxide semiconducting thin films were deposited by spin coating. The deposited films were found to be smooth and uniform with an amorphous structure. Enhancement-mode metal-insulator-semiconductor field-effect transistors were fabricated showing a field-effect mobility (mu(FE)) as high as 16 cm(2)/V s, a turn-on voltage of 2 V, a current on-to-off ratio greater than 10(5), and a high on-current of 2.25 mA. (c) 2007 The Electrochemical Society.

引用

页码：H135 / H138

页数：4

共 30 条

[1]

[Anonymous], 1990, FIELD EFFECT DEVICES

[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[3] Nanocrystalline CdS MISFETs fabricated by a novel continuous flow microreactor [J].

Chang, YJ ;

Mugdur, PH ;

Han, SY ;

Morrone, AA ;

Ryu, SO ;

Lee, TJ ;

Chang, CH .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (05) :G174-G177

[4] Growth, characterization and application of US thin films deposited by chemical bath deposition [J].

Chang, YJ ;

Munsee, CL ;

Herman, GS ;

Wager, JF ;

Mugdur, P ;

Lee, DH ;

Chang, CH .

SURFACE AND INTERFACE ANALYSIS, 2005, 37 (04) :398-405

[5] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[6] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[7] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[8] ZnO-channel thin-film transistors: Channel mobility [J].

Hoffman, RL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5813-5819

[9] Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides [J].

Hosono, H ;

Yasukawa, M ;

Kawazoe, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 203 :334-344

[10]

Hosono H., 1996, J NONCRYST SOLIDS, V198-200, P165

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