Solution-processed zinc tin oxide semiconductor for thin-film transistors

被引:163
作者
Jeong, Sunho [1 ]
Jeong, Youngmin [1 ]
Moon, Jooho [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
关键词
D O I
10.1021/jp803475g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A zinc tin oxide (ZTO) semiconductor layer for thin-film transistor was fabricated using solution-processable sol-gel material. To obtain semiconductor characteristics, ZTO gels should be annealed such that salts and organic components in the ZTO layer undergo complete decomposition. The thermal behavior of ZTO precursor materials was investigated, and the electrical performances of solution-processed transistors were analyzed as a function of the annealing temperature of the ZTO semiconductor layer. We also studied the electrical performance of transistors as a function of the Sn content of the ZTO layer, in order to understand its influence on the device characteristics of solution-processed transistors.
引用
收藏
页码:11082 / 11085
页数:4
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