Solution-processed indium-zinc oxide transparent thin-film transistors

被引：160

作者：

Choi, Chaun Gi ^{[1
]}

Seo, Seok-Jun ^{[1
]}

Bae, Byeong-Soo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Lab Opt Mat & Coating, Taejon 305701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 01期

关键词：

D O I：

10.1149/1.2800562

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined. Solution-processed IZO thin films were amorphous and highly transparent with >90% transmittance in the visible region with an optical bandgap of 3.1 eV. Spin-coated IZO TTFTs were operated in depletion mode and showed a field-effect mobility as high as 7.3 cm(2)/V s, a threshold voltage of 2.5 V, an on/off current ratio greater than 107, and a subthreshold slope of 1.47 V/decade. (C) 2007 The Electrochemical Society.

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页码：H7 / H9

页数：3

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