Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

被引：49

作者：

Navamathavan, R. ^{[1
]}

Choi, Chi Kyu ^{[1
]}

Yang, Eun-Jeong ^{[2
]}

Lim, Jae-Hong ^{[2
]}

Hwang, Dae-Kue ^{[2
]}

Park, Seong-Ju ^{[2
]}

机构：

[1] Jeju Natl Univ, Nano Thin Film Mat Lab, Dept Phys, Cheju, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Nanophoton Semicond Lab, Kwangju 500712, South Korea

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 05期

关键词：

semiconductor; thin film transistor; electrical properties; ZnO; rf magnetron sputtering;

D O I：

10.1016/j.sse.2007.11.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by using radio frequency (rf) magnetron sputtering technique. The TFT device structure used in this study was a bottom gate type, which consists of SiNx as a gate insulator and indium tin oxide (ITO) as a gate deposited onto Corning glass substrates. These ZnO TFTs had a saturation field effect mobility of about 31 cm(2)/V s, an oil to off ratio of greater than 105, the off Current of less than 10(-10) A, and a threshold voltage of 9 V at a maximum device processing temperature of 300 degrees C. This TFT had a channel width of 400 pill and channel length of 10 pm. Moreover, the SiNx dielectric layer was found to be optimum for the high performance ZnO based TFTs because of the very low leakage current and good interface between the channel layer and gate material. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：813 / 816

页数：4

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