Refractive index and absorption changes in low-temperature-grown GaAs

被引：12

作者：

Loka, HS ^{[1
]}

Benjamin, SD ^{[1
]}

Smith, PWE ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

OPTICS COMMUNICATIONS | 1998年 / 155卷 / 1-3期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/S0030-4018(98)00341-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For all-optical switching device design, the excitation pulse width is one of the essential features to be considered to achieve optimum operation. In this paper we investigate the effect of growth and annealing conditions and the excitation pulse width on refractive index and absorption changes in low-temperature-grown GaAs (LT-GaAs). We use our previously developed rate equation model to validate our interpretations for the different measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：206 / 212

页数：7

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