Intense ultraviolet photoluminescence from amorphous Si:O:C films prepared by liquid-solution-phase technique

被引：13

作者：

Fu, ZP

Li, M

Yang, BF ^{[1
]}

Liu, RC

机构：

[1] Univ Sci & Technol China, Acad Sinica, Struct Res Lab, Anhua 230026, Peoples R China

[2] Univ Sci & Technol China, Acad Sinica, Dept Mat Sci & Engn, Anhua 230026, Peoples R China

[3] Univ Sci & Technol China, Acad Sinica, Internal Frict & Detects Solid Lab, Anhua 230026, Peoples R China

来源：

THIN SOLID FILMS | 2001年 / 389卷 / 1-2期

关键词：

photoluminescence; liquid-solution-phase; Si/O/C film;

D O I：

10.1016/S0040-6090(01)00868-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intense ultraviolet (W) photoluminescence (PL) was observed at room temperature from amorphous Si:O:C films synthesized at 200, 300, 400 degreesC by the liquid-solution-phase (LSP) method. The intensity was as strong as that of visible emission band from porous silicon. In all the films, a band existed, centered at 340 mn, while a shoulder band centered at 380 nm was observed from the films deposited at 400 degreesC. By analyzing the PL and photoluminescence excitation (PLE) spectra, Fourier-transform infrared (FTIR) absorption, X-ray photoelectronic spectroscopy (XPS) and X-ray diffraction (XRD), we suggest that the photoluminescence peak at 340 nm originates from the defects in silicon oxide network, while the peak at 380 nm may be related to Si-C and Si-Si bonds in the samples. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：12 / 15

页数：4

共 18 条

[1] Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source [J].