SiC formation at the interface of polyimide Langmuir-Blodgett film and silicon

被引：9

作者：

Ji, MR ^{[1
]}

Zhu, JS ^{[1
]}

Ma, MS ^{[1
]}

Wu, JX ^{[1
]}

Liu, XM ^{[1
]}

Jin, BK ^{[1
]}

Yang, BF ^{[1
]}

He, PS ^{[1
]}

Ruan, YZ ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,DEPT MAT SCI & ENGN,HEFEI 230026,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.363047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy has been used to explore the process of the interaction between the polyimide film made by the Langmuir-Blodgett method and the substrate Si(111). It is evident that the process includes three stages: The polymer degrades below temperature of about 500 degrees C resulting in some hydrocarbon species on the surface; at higher temperatures the residual hydrocarbons convert to some state of elemental carbon and then diffuse into the substrate to form ''C-Si alloy'' which is regarded as a precursor of SiC formation; SiC starts to form at about 700 degrees C and grows at higher temperatures. (C) 1996 American Institute of Physics.

引用

页码：2471 / 2474

页数：4

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