Stable blue-green and ultraviolet photoluminescence from silicon carbide on porous silicon

被引：6

作者：

Liu, RC ^{[1
]}

Yang, BF ^{[1
]}

Fu, ZP ^{[1
]}

He, PS ^{[1
]}

Ruan, YZ ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 04期

关键词：

semiconductor; thin films; optical properties; luminescence;

D O I：

10.1016/S0038-1098(98)00005-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

beta-Silicon carbide layers have been prepared by high temperature pyrolysis of polyimide Langmuir-Blodgett films on porous silicon substrate in vacuum. The formation of silicon carbide is confirmed by the IR and XRD spectra. It is found that photoluminescence still exists and appears in the blue-green and ultraviolet regions after thermal treatment at 900 degrees C. These results indicate that the silicon carbide layers, which ie formed, are responsible for the blue-green luminescence. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：211 / 214

页数：4

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