Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

被引：48

作者：

Pimentel, A

Fortunato, E

Gonçalves, A

Marques, A

Aguas, H

Pereira, L

Ferreira, I

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal

来源：

THIN SOLID FILMS | 2005年 / 487卷 / 1-2期

关键词：

ZnO; thin films; electrical properties; rf magnetron sputtering;

D O I：

10.1016/j.tsf.2005.01.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5 x 10(8) Omega cm with in optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. (C) 2005 Elsevier B.V. All rights reserved.

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收藏

页码：212 / 215

页数：4

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