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Fatigue properties of oriented PZT ferroelectric thin films

被引：23
作者：
Le Rhun, G
Poullain, G
Bouregba, R
Leclerc, G
机构：
[1] Univ Caen, Lab CRISMAT, ENSICAEN, F-14050 Caen, France
[2] CNRS, UMR 6508, F-14050 Caen, France
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2005年 / 25卷 / 12期
关键词：
films; ferroelectric properties; fatigue; PZT;
D O I：
10.1016/j.jeurceramsoc.2005.03.046
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Oriented PZT thin films with Zr/Ti ratio of 60/40 were prepared using a multi-target R.F. sputtering system. The films were (1 0 0) or (1 1 1) oriented when grown on Pt/TiO2/SiO2/Si and exhibited c-axis epitaxial microstructure when deposited on Pt/MgO. Electrical measurements were performed in order to investigate the fatigue properties of the films. Fatigue characteristics of the Pt/PZT/Pt capacitors were found to be strongly dependent on their crystalline orientation: (1 1 1) and (0 0 1) oriented films exhibited poor fatigue endurance unlike (1 0 0) oriented films that did not fatigue. Lastly, almost full recovery of polarisation was obtained for c-axis epitaxial films while (1 1 1) oriented films showed only partial restoration. (c) 2005 Elsevier Ltd. All rights reserved.
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页码：2281 / 2284
页数：4
相关论文
共 15 条
[1]   FATIGUE CHARACTERISTICS OF SOL-GEL DERIVED PB(ZR, TI)O-3 THIN-FILMS [J].
AMANUMA, K ;
HASE, T ;
MIYASAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5211-5214
[2]   Orientation dependence of fatigue behavior in relaxor ferroelectric-PbTiO3 thin films [J].
Bornand, V ;
Trolier-McKinstry, S ;
Takemura, K ;
Randall, CA .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) :3965-3972
[3]   Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding [J].
Bouregba, R ;
Poullain, G ;
Vilquin, B ;
Murray, H .
MATERIALS RESEARCH BULLETIN, 2000, 35 (09) :1381-1390
[4]   Epitaxial PZT thin films on TiOx covered Pt/MgO substrate by RF magnetron sputtering [J].
Bouregba, R ;
Poullain, G ;
Vilquin, B ;
Murray, H .
FERROELECTRICS, 2001, 256 :47-68
[5]   Asymmetry in fatigue and recovery in ferroelectric Pb(Zr,Ti)O3 thin-film capacitors [J].
Chae, BG ;
Park, CH ;
Yang, YS ;
Jang, MS .
APPLIED PHYSICS LETTERS, 1999, 75 (14) :2135-2137
[6]   Ferroelectric characteristics of oriented Pb(Zr1-xTix)O3 films [J].
Chen, SY ;
Sun, CL .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2970-2974
[7]   Fatigued state of the Pt-PZT-Pt system [J].
Colla, EL ;
Tagantsev, AK ;
Taylor, DV ;
Kholkin, AL .
INTEGRATED FERROELECTRICS, 1997, 18 (1-4) :19-28
[8]   Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary [J].
Du, XH ;
Zheng, JH ;
Belegundu, U ;
Uchino, K .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2421-2423
[9]  
Jenkins D. F. L., 1999, Ferroelectrics, V224, P259, DOI 10.1080/00150199908210575
[10]   Epitaxial Pb(Zr,Ti)O3 thin films with coexisting tetragonal and rhombohedral phases [J].
Oh, SH ;
Jang, HM .
PHYSICAL REVIEW B, 2001, 63 (13)
12